Semiconductor Device and System Laboratory

Journals

• A Dual-Programmable 2M NOR Flash Architecture for Energy-Efficient In-Memory Computing

  Suhan Kim, Donghyun Ryu, Hyoseob Kim, Sangwoo Jung, Min-Hwi Kim
  Accepted Advanced Science
  
  

• Mechanism discrimination in multilevel RRAM using state-resolved impedance evolution

  Sangwoo Jung, Hyoseob Kim, Kyungho Hong, Sungjoon Kim, Donghyun Ryu, Min-Hwi Kim
  2026/08/10 Materials Horizons
  https://doi.org/10.1039/d6mh00735j
  

• A Generic Compact Model for Resistive Memories and Switches

  Sangwoo Jung, Hyoseob Kim, Jiseon Park, Sungjun Kim, and Min-Hwi Kim
  2026/04/04 Scientific Reports
  https://doi.org/10.1038/s41598-026-42077-y

• Light-Programmable IGZO Optoelectronic Memristor for Multifunctional Neuromorphic Computing

  Heeseong Jang, Seohyeon Ju, Youngseo Lee, Minsu Ko, Chanmin Park, Min-Hwi Kim, and Sungjun Kim
  2026/02/03 ACS Applied Materials & Interfaces
  https://doi.org/10.1021/acsami.5c24346
  

• Multifunctional ZnO-based optical memristors for synapse–neuron integration and neuromorphic vision systems

  Heeseong Jang, Seongmin Kim, Seohyeon Ju, Seungman Park, Sungjun Kim, and Min-Hwi Kim
  2025/09/16 Nanoscale
  https://doi.org/10.1039/D5NR02736E
  

• Implementation of Ultra-Low-Power Neural Networks on Quantized and Pruned RRAM Crossbar Arrays

  Hyoseob Kim, Kyungho Hong, Sungjoon Kim, Woo Young Choi and Min-Hwi Kim
  2025/06/18 Materials Horizons
  https://doi.org/10.1039/D5MH00086F
  

• Investigation of dual memory behavior in RRAM: coexistence of resistive and capacitive switching phenomena

  Hyoseob Kim, Suhan Kim, Jae-Yeong Cho, Sin-Hyung Lee, Min-Hwi Kim
  2025/04/15 Scientific Reports
  https://doi.org/10.1038/s41598-025-96782-1

• Dual Functionality of NbOx Memristors for Synaptic and Neuronal Emulation in Advanced Neuromorphic Systems

  Seongmin Kim, Jungang Heo, Sungjun Kim, Min-Hwi Kim
  2024/10/04 Journal of Materials Chemistry C
  https://doi.org/10.1039/D4TC03212H

• Configurable Synaptic and Stochastic Neuronal Functions in ZnTe-Based Memristor for an RBM Neural Network

  Jungang Heo, Seongmin Kim, Sungjun Kim, Min-Hwi Kim
  2024/09/05 Advanced Science
  https://doi.org/10.1002/advs.202405768

• Artificial Neural Network Classification using Al-Doped HfOx-Based Ferroelectric Tunneling Junction with Self-Rectifying Behaviors

  Eunjin Lim, Dongyeol Ju, Jungwoo Lee, Yongjin Park, Min-Hwi Kim, Sungjun Kim
  2024/05/13 ACS Materials Letters
  https://doi.org/10.1021/acsmaterialslett.3c01587

• Overshoot‐Suppressed Memristor Array with AlN Oxygen Barrier for Low‐Power Operation in the Intelligent Neuromorphic Systems

  Sungjoon Kim, Kyungho Hong, Hyungjin Kim, Min-Hwi Kim, Woo Young Choi
  2024/05/12 Advanced Intelligent Systems
  https://doi.org/10.1002/aisy.202300797

• Noise-assisted transport mechanism analysis and synaptic characteristics in ZrOX/HfAlOX-based memristor for neuromorphic systems

  Jungang Heo, Youngboo Cho, Hyeonseung Ji, Min-Hwi Kim, Jong-Ho Lee, Jung-Kyu Lee, Sungjun Kim
  2023/11/01 APL Materials
  https://doi.org/10.1063/5.0175587

• Definition of a Localized Conducting Path via Suppressed Charge Injection in Oxide Memristors for Stable Practical Hardware Neural Networks

  Hyeongwook Kim, Jihwan Lee, Hyun Wook Kim, Jiyong Woo, Min-Hwi Kim, Sin-Hyung Lee
  2023/10/24 ACS Applied Materials & Interfaces
  https://doi.org/10.1021/acsami.3c13514

• Biodegradable and Flexible Polymer-Based Memristor Possessing Optimized Synaptic Plasticity for Eco-Friendly Wearable Neural Networks with High Energy Efficiency

  Sungjun Oh, Hyungjin Kim, Seong Eun Kim, Min-Hwi Kim, Hea-Lim Park, Sin-Hyung Lee
  2023/02/17 Advanced Intelligent Systems
  https://doi.org/10.1002/aisy.202200272

• Systematic Engineering of Metal Ion Injection in Memristors for Complex Neuromorphic Computing with High Energy Efficiency

  Seong Eun Kim, Min-Hwi Kim, Jisu Jang, Hyungjin Kim, Sungjun Kim, Jaewon Jang, Jin-Hyuk Bae, In Man Kang, Sin-Hyung Lee
  2022/6/21 Advanced Intelligent Systems

• Artificial synapse characteristics of a ZnO-based memristor with a short-term memory effect

  Seokyeon Yun, Chandreswar Mahata, Min-Hwi Kim, Sungjun Kim
  2022/3/30 Applied Surface Science

• A Fast Weight Transfer Method for Real-Time Online Learning in RRAM-Based Neuromorphic System

  Min-Hwi Kim, Sin-Hyung Lee, Sungjun Kim, Byung-Gook Park
  2022/3/8 IEEE Access

• Fluoropolymer-based organic memristor with multifunctionality for flexible neural network system

  Min-Hwi Kim, Hea-Lim Park, Min-Hoi Kim, Jaewon Jang, Jin-Hyuk Bae, In Man Kang, Sin-Hyung Lee
  2021/12/17 npj Flexible Electronics

• A More Hardware-Oriented Spiking Neural Network Based on Leading Memory Technology and Its Application With Reinforcement Learning

  Min-Hwi Kim, Sungmin Hwang, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Md Hasan Raza Ansari, Seongjae Cho, Byung-Gook Park
  2021/8/4 IEEE Transactions on Electron Devices

• Self‐Selective Organic Memristor by Engineered Conductive Nanofilament Diffusion for Realization of Practical Neuromorphic System

  Hea‐Lim Park, Min‐Hwi Kim, Hyungjin Kim, Sin‐Hyung Lee
  2021/8/1 Advanced Electronic Materials

• Nanoscale wedge resistive-switching synaptic device and experimental verification of vector-matrix multiplication for hardware neuromorphic application

  Min-Hwi Kim, Seongjae Cho, Byung-Gook Park
  2021/5/6 Japanese Journal of Applied Physics

• Insertion of Ag Layer in TiN/SiNx/TiN RRAM and Its Effect on Filament Formation Modeled by Monte Carlo Simulation

  Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park
  2020/12/21 IEEE Access

• Improvement of Resistive Switching Characteristics of Titanium Oxide Based Nanowedge RRAM Through Nickel Silicidation

  Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Yeon-Joon Choi, Kyungho Hong, Sungjun Kim, Seongjae Cho, Jong-Ho Lee, Byung-Gook Park
  2020/12/14 IEEE Transactions on Electron Devices

• Realization of biomimetic synaptic functions in a one-cell organic resistive switching device using the diffusive parameter of conductive filaments

  Sin-Hyung Lee, Hea-Lim Park, Min-Hoi Kim, Min-Hwi Kim, Byung-Gook Park, Sin-Doo Lee
  2020/11/5 ACS Applied Materials & Interfaces

• Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices

  Ji-Ho Ryu, Fayyaz Hussain, Chandreswar Mahata, Muhammad Ismail, Yawar Abbas, Min-Hwi Kim, Changhwan Choi, Byung-Gook Park, Sungjun Kim
  2020/11/1 Applied Surface Science

• Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array

  Tae-Hyeon Kim, Hussein Nili, Min-Hwi Kim, Kyung Kyu Min, Byung-Gook Park, Hyungjin Kim
  2020/10/12 Applied Physics Letters

• Multilevel Switching Characteristics of Si3N4-Based Nano-Wedge Resistive Switching Memory and Array Simulation for In-Memory Computing Application

  Dong Keun Lee, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park
  2020/7/30 Electronics

• Synaptic characteristics of amorphous boron nitride-based memristors on a highly doped silicon substrate for neuromorphic engineering

  Jinju Lee, Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Chandreswar Mahata, Eunjin Sim, Muhammad Ismail, Yawar Abbas, Haider Abbas, Dong Keun Lee, Min-Hwi Kim, Yoon Kim, Changhwan Choi, Byung-Gook Park, Sungjun Kim
  2020/7/1 ACS applied materials & interfaces

• Fabrication and Characterization of TiOx Memristor for Synaptic Device Application

  Tae-Hyeon Kim, Min-Hwi Kim, Suhyun Bang, Dong Keun Lee, Sungjun Kim, Seongjae Cho, Byung-Gook Park
  2020/5/29 IEEE Transactions on Nanotechnology

• Memristive and synaptic characteristics of nitride-based heterostructures on si substrate

  Mehr Khalid Rahmani, Min-Hwi Kim, Fayyaz Hussain, Yawar Abbas, Muhammad Ismail, Kyungho Hong, Chandreswar Mahata, Changhwan Choi, Byung-Gook Park, Sungjun Kim
  2020/5/22 Nanomaterials

• HfOx-based nano-wedge structured resistive switching memory device operating at sub-μA current for neuromorphic computing application

  DK Lee, MH Kim, S Bang, TH Kim, YJ Choi, S Kim, S Cho, BG Park
  2020/3/25 Semiconductor Science and Technology

• Investigation of the Thermal Recovery From Reset Breakdown of a SiNx-Based RRAM

  Kyungho Hong, Kyung Kyu Min, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon Joon Choi, Chae Soo Kim, Jae Yoon Lee, Sungjun Kim, Seongjae Cho, Byung-Gook Park
  2020/3/10 IEEE Transactions on Electron Devices

• Reliable organic memristors for neuromorphic computing by predefining a localized ion-migration path in crosslinkable polymer

  Hea-Lim Park, Min-Hwi Kim, Min-Hoi Kim, Sin-Hyung Lee
  2020/10/26 Nanoscale

• SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory

  Chandreswar Mahata, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Yeon-Joon Choi, Sungjun Kim, Byung-Gook Park
  2019/5/6 Applied Physics Letters

• Synaptic behaviors of HfO2 ReRAM by pulse frequency modulation

  Dong Keun Lee, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Yeon-Joon Choi, Sungjun Kim, Seongjae Cho, Byung-Gook Park
  2019/4/1 Solid-State Electronics

• Ni/GeOx/p+ Si resistive-switching random-access memory with full Si processing compatibility and its characterization and modeling

  Jae Yoon Lee, Youngmin Kim, Min-Hwi Kim, Seoyeon Go, Seung Wook Ryu, Jae Yeon Lee, Tae Jung Ha, Soo Gil Kim, Seongjae Cho, Byung-Gook Park
  2019/3/1 Vacuum

• Neuronal dynamics in HfOx/AlOy-based homeothermic synaptic memristors with low-power and homogeneous resistive switching

  Sungjun Kim, Jia Chen, Ying-Chen Chen, Min-Hwi Kim, Hyungjin Kim, Min-Woo Kwon, Sungmin Hwang, Muhammad Ismail, Yi Li, Xiang-Shui Miao, Yao-Feng Chang, Byung-Gook Park
  2018/11/27 Nanoscale

• Gradual switching and self-rectifying characteristics of Cu/α-IGZO/p+-Si RRAM for synaptic device application

  Suhyun Bang, Min-Hwi Kim, Tae-Hyeon Kim, Dong Keun Lee, Sungjun Kim, Seongjae Cho, Byung-Gook Park
  2018/12/1 Solid-State Electronics

• Dual functions of V/SiOx/AlOy/p++ Si device as selector and memory

  Sungjun Kim, Chih-Yang Lin, Min-Hwi Kim, Tae-Hyeon Kim, Hyungjin Kim, Ying-Chen Chen, Yao-Feng Chang, Byung-Gook Park
  2018/12 Nanoscale research letters

• Concurrent events of memory and threshold switching in Ag/SiNx/Si devices

  Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Ying-Chen Chen, Yao-Feng Chang, Muhammad Ismail, Yoon Kim, Kyung-Chang Ryoo, Byung-Gook Park
  2018/9/21 Journal of Vacuum Science & Technology B

• Uniformity Improvement of SiNx-Based Resistive Switching Memory by Suppressed Internal Overshoot Current

  Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Byung-Gook Park
  2018/5/30 IEEE Transactions on Nanotechnology

• Scaling effect on silicon nitride memristor with highly doped Si substrate

  Sungjun Kim, Sunghun Jung, Min‐Hwi Kim, Ying‐Chen Chen, Yao‐Feng Chang, Kyung‐Chang Ryoo, Seongjae Cho, Jong‐Ho Lee, Byung‐Gook Park
  2018/5/9 Small

• Circuit-level simulation of resistive-switching random-access memory cross-point array based on a highly reliable compact model

  Min-Hwi Kim, Sungjun Kim, Kyung-Chang Ryoo, Seongjae Cho, Byung-Gook Park
  2018/3/1 Journal of Computational Electronics

• Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

  Tae-Hyeon Kim, Sungjun Kim, Hyungjin Kim, Min-Hwi Kim, Suhyun Bang, Seongjae Cho, Byung-Gook Park
  2018/2/1 Solid-State Electronics

• Analog synaptic behavior of a silicon nitride memristor

  Sungjun Kim, Hyungjin Kim, Sungmin Hwang, Min-Hwi Kim, Yao-Feng Chang, Byung-Gook Park
  2017/11/22 ACS applied materials & interfaces

• Understanding reset transitions in Ni/SiNx/Si resistive random-access memory

  Sungjun Kim, Min-Hwi Kim, Byung-Gook Park
  2017/10/1 Journal of Nanoscience and Nanotechnology

• Design and Analysis for 3D Vertical Resistive Random Access Memory Structures with Silicon Bottom Electrodes

  Tae-Hyeon Kim, Sungjun Kim, Min-Hwi Kim, Seongjae Cho, Byung-Gook Park
  2017/10/1 Journal of Nanoscience and Nanotechnology

• Improved resistive switching characteristics in Ni/SiNx/p++-Si devices by tuning x

  Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Byung-Gook Park
  2017/7/17 Applied Physics Letters

• Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory

  Min-Hwi Kim, Sungjun Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Seongjae Cho, Jong-Ho Lee, Byung-Gook Park
  2017/6/1 Solid-State Electronics

• Integrate-and-fire (I&F) neuron circuit using resistive-switching random access memory (RRAM)

  Min-Woo Kwon, Sungjun Kim, Min-Hwi Kim, Jungjin Park, Hyungjin Kim, Sungmin Hwang, Byung-Gook Park
  2017/5/1 Journal of Nanoscience and Nanotechnology

• Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory

  Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Tae-Hyeon Kim, Yoon Kim, Byung-Gook Park
  2017/4/26 Materials

• Nano-cone resistive memory for ultralow power operation

  Sungjun Kim, Sunghun Jung, Min-Hwi Kim, Tae-Hyeon Kim, Suhyun Bang, Seongjae Cho, Byung-Gook Park
  2017/2/23 Nanotechnology

• Ultralow power switching in a silicon-rich SiNy/SiNx double-layer resistive memory device

  Sungjun Kim, Yao-Feng Chang, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Ying-Chen Chen, Jong-Ho Lee, Byung-Gook Park
  2017/7/1 Physical Chemistry Chemical Physics

Patents

• 자연어 입력 명령에 따른 테스트 레시피 자동 구성을 위한 생성형 인공지능 기반 반도체 소자 측정 제어 시스템 및 방법

  김민휘
  2026/07/30 출원번호 제 10-2026-0141264

• 비휘발성 메모리 소자, 이를 포함하는 메모리 장치 및 이에서의 동작 방법

  김민휘
  2025/10/21 출원번호 제 10-2025-0152856

• 교차점 메모리 어레이의 쓰기 방법

  김민휘
  2023/02/07 출원번호 제 10-2023-0016022
  2025/07/22 특허 제 10-2838978호

• NONVOLATILE MEMORY DEVICE INCLUDING COMBINED SENSING NODE AND CACHE READ METHOD THEREOF

  Yongsung Cho, Min-Hwi Kim, Hosang Cho
  2025/02/04 Patent No. US 12,217,804 B2

• NEURAL NETWORKS USING CROSS POINT AND PATTERN READOUT METHOD THEREOF

  Byung Gook Park, Min Hwi Kim , Sungjun Kim
  2022/03/15 Patent No. US 11,275,999 B2, Mar. 15, 2022.

• OPERATION METHOD OF RESISTIVE MEMORY DEVICE

  Byung-Gook Park, Min-Hwi Kim, Sungjun Kim
  2020/10/06 Patent No. US 10,797,236 B2

• RESISTIVE RANDOM ACCESS MEMORY DEVICE FOR 3D STACK AND MEMORY ARRAY USING THE SAME AND FABRICATION METHOD THEREOF

  Byung-Gook Park, Sungjun Kim, Min-Hwi Kim, Tae-Hyeon Kim, Sang-Ho Lee
  2020/08/11 Patent No. US 10,741,760 B2

• 저항변화 메모리 소자의 전류성분 측정을 위한 등가회로

  박병국, 김민휘, 김성준
  2020/06/26 특허 제 10-2129547호

• 교차점 어레이를 이용한 신경 연결망 및 그 패턴 인식방법

  박병국, 김민휘, 김성준
  2020/06/19 특허 제 10-2126791호

• 나노 팁 구조와 나노 와이어를 갖는 저항성 메모리 소자 및 이를 이용한 메모리 어레이와 그 제조방법

  박병국, 진성훈, 정성헌, 김민휘
  2016/05/20 특허 제 10-1624565호